| PART |
Description |
Maker |
| MT47H128M16RT-25EC MT47H128M16RT-25EITC MT47H256M8 |
DDR2 SDRAM MT47H512M4 ?64 Meg x 4 x 8 banks MT47H256M8 ?32 Meg x 8 x 8 banks MT47H128M16 ?16 Meg x 16 x 8 banks
2Gb: x4, x8, x16 DDR2 SDRAM Features
|
Micron Technology
|
| MT48LC16M16A2P-75DTR |
SDR SDRAM MT48LC64M4A2 ?16 Meg x 4 x 4 banks MT48LC32M8A2 ?8 Meg x 8 x 4 banks MT48LC16M16A2 ?4 Meg x 16 x 4 banks
|
Micron Technology
|
| 97SD3232RPMK 97SD3232 97SD3232RPME 97SD3232RPMH 97 |
1 Gb SDRAM 8-Meg X 32 Bit X 4-Banks
|
MAXWELL[Maxwell Technologies]
|
| MT48H16M16LFB5-8G MT48H8M32LFB5-8G MT48H16M16LFB5- |
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
|
Micron Technology
|
| MT41K512M16 |
32 Meg x 16 x 8 Banks 1.35V DDR3L-RS SDRAM
|
Micron Technology
|
| AS4SD4M16DG-8_IT AS4SD4M16DG-8_XT AS4SD4M16DG-10_I |
4 Meg x 16 SDRAM Synchronous DRAM Memory
|
Austin Semiconductor
|
| AS4SD16M16DG-75/IT AS4SD16M16DG-75/XT |
256 MB: 16 Meg x 16 SDRAM Synchronous DRAM Memory
|
Austin Semiconductor
|
| AS4SD8M16 AS4SD8M16DG-75_ET AS4SD8M16DG-75_IT AS4S |
128 Mb: 8 Meg x 16 SDRAM Synchronous DRAM Memory
|
Austin Semiconductor
|
| IDT71V416YS15YGI IDT71V416YS IDT71V416YL10BEG IDT7 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位）
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| MT8D132M-XXX MT16D232M-XXX MT16D232-6X MT8D132-7X |
1 MEG, 2 MEG x 32 DRAM MODULES 1乙二醇，二乙二醇× 32 DRAM模块
|
Micron Technology, Inc.
|
| IDT71V416S10PHG IDT71V416S10PHGI IDT71V416S12PHG I |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 15 ns, PBGA48
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 10 ns, PDSO44
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
